Search results for "leakage currents"

showing 3 items of 3 documents

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

2019

IEEE Transactions on Nuclear Science, 66 (7)

Nuclear and High Energy PhysicsMaterials scienceSiC power MOSFETsheavy ion irradiationComputerApplications_COMPUTERSINOTHERSYSTEMS01 natural scienceselektroniikkakomponentitchemistry.chemical_compoundMOSFETgate leakageGate oxidesilicon carbide0103 physical sciencesMOSFETSilicon carbideIrradiationElectrical and Electronic EngineeringPower MOSFETLeakage (electronics)leakage currentsionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilysingle event effectspilaantuminenNuclear Energy and EngineeringchemistrysäteilyfysiikkaLogic gatelogic gatesradiation effectstransistoritOptoelectronicsbusinessAND gate
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Charge carrier transport mechanisms in CdZnTe detectors grown by the vertical Bridgman technique

2016

In this work, we report on the results of electrical characterization of CdZnTe (CZT) detectors, with gold electroless contacts, grown by the boron oxide encapsulated vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), have the same electrode layout: the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard ring electrode. The cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). Current-voltage (I-V) characteristics were measured at different temperatures in order to study the charge transport and the electrical properties. These detectors were compared with the trav…

Radiology Nuclear Medicine and ImagingMaterials sciencebusiness.industryDetectorSettore FIS/01 - Fisica SperimentaleBiasingCathodePhoton countingSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Anodelaw.inventionDetectors; Crystals; Conductivity; Temperature measurement; Leakage currents; Surface treatment; TemperaturelawElectrodeOptoelectronicsCharge carrierbusinessInstrumentationVoltageNuclear and High Energy Physic
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Perimeter leakage current in polymer light emitting diodes

2009

Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). © 2008 Elsevier B.V. All rights reserved.

chemistry.chemical_classificationMaterials sciencebusiness.industryGeneral Physics and AstronomyPolymerPolymer light emitting diodesLeakage currentsLight emitting diodesPerimeterchemistryPhenyleneMathematics::Metric GeometryOptoelectronicsGeneral Materials SciencebusinessEdge shuntOhmic contactCurrent densityDiodeLeakage (electronics)Current Applied Physics
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